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| Ordering number:EN3482 FC12 TR:NPN Epitaxial Plannar Silicon Transistor FET:N-Channel Junction Silicon Transistor High-Frequency Amp, AM Applications, Low-Frequency Amp Features * Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. * The FC12 is formed with two chips, being equivalent to the 2SC4639, placed in one package. * Common drain and emitter. Package Dimensions unit:mm 2075 [FC12] Electrical Connection C:Collector G:Gate S:Source E/D:Emitter/Drain B:Base SANYO:CP5 Switching Time Test Circuit Specifications Absolute Maximum Ratings at Ta = 25C Parameter [FET] Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation [TR] Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation [Common Ratings] Total Dissipation Junction Temperature Storage Temperature PT Tj Tstg 300 150 -55 to +150 mW VCBO VCEO VEBO IC ICP IB PC 55 50 6 150 300 30 200 V V V mA mA mA mW VDSX VGDS IG ID PD 15 -15 10 50 200 V V mA mA mW Symbol Conditions Ratings Unit C C Marking:12 SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA (KT)/5132MH, HK No.3482-1/5 FC12 Electrical Characterisitics at Ta = 25C Parameter [FET] Gate-to-Drain Breakdown Voltage Gate-to-Cutoff Current Cutoff Voltage Drain Current Forward Transfer Admittance Input Capacitance Reverse Transfer Capacitance Noise Figure [TR] Collector Cuttoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance C-E Saturation Voltage B-E Saturation Voltage C-B Breakdown Voltage C-E Breakdown Voltage E-B Breakdown Voltage Turn-ON Time Storage Time Fall Time ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) VCB=35V, IE=0 VEB=4V, IC=0 VCE=6V, IC=1mA VCE=6V, IC=10mA VCB=6V, f=1MHz IC=50mA, IB=5mA IC=50mA, IB=5mA 55 50 6 0.15 0.75 0.20 135 200 1.7 0.08 0.8 0.4 1.0 0.1 0.1 400 MHz pF V V V V V s s s A A V(BR)GDS IG=-10A, VDS=0 IGSS VGS=-10V, VDS=0 VGS(off) IDSS | Yfs | Ciss Crss NF VDS=5V, ID=100A VDS=5V, VGS=0 VDS=5V, VGS=0, f=1kHz VDS=5V, VGS=0, f=1MHz VDS=5V, VGS=0, f=1MHz VDS=5V, Rg=1k, ID=1mA, f=1kHz -15 -1.0 -0.2 6.0* 25 50 10 3.0 1.5 -0.6 -1.4 20.0* V nA V mA mS pF pF dB Symbol Conditions Ratings min typ max Unit V(BR)CBO IC=10A, IE=0 V(BR)CEO IC=1mA, RBE= V(BR)EBO ton tstg tf IE=10A, IC=0 See specified Test Circuit See specified Test Circuit See specified Test Circuit Note*:The FC12 is classified by IDSS as follows : (unit:mA). 6.0 F 12.0 10.0 G 20.0 Primany Characteristics of FET No.3482-2/5 FC12 No.3482-3/5 FC12 Primany Characteristic of TR No.3482-4/5 FC12 No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 1998. Specifications and information herein are subject to change without notice. PS No.3482-5/5 |
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